NXP Semiconductors
BAT74S
Dual Schottky barrier diode
BAT74S
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? NXP B.V. 2012. All rights reserved
Product data sheet
22 November 2012
3
/
10
Symbol
Parameter
Conditions
Min
Max
Unit
Tamb
ambient temperature
-55
125
°C
Tstg
storage temperature
-65
150
°C
Per device
series connection
-
60
V
VR
reverse voltage
-
30
V
IF
forward current
[1]
-
110
mA
IFRM
repetitive peak forward current
tp
≤ 1 s; δ
≤ 0.5
-
200
mA
[1]
If both diodes are in forward operation at the same moment, total device current is maximum 110 mA.
If one diode is in reverse and the other in forward operation at the same moment, total device current is
maximum 200 mA.
mbl889
0
0
100
200
300
Ptot
(mW)
150
75
Tamb
(°C)
Fig. 1.
Power derating curve
6.
Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
-
-
416
K/W
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
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